DocumentCode
315644
Title
SOI CMOS as a mainstream low-power technology: a critical assessment
Author
Antoniadis, Dimitri A.
Author_Institution
Microsyst. Technol. Lab., MIT, Cambridge, MA, USA
fYear
1997
fDate
18-20 Aug. 1997
Firstpage
295
Lastpage
300
Abstract
This paper provides an overview of SOI MOSFET theory and practice with emphasis on circuit applications issues. Fully and partially depleted channel devices are considered and particular attention is given to describing the so-called floating-body effects that are unique to SOI. Two advanced SOI MOSFET configurations, dual-gate SOI and active body SOI, specifically developed for low voltage circuit applications are also discussed.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit technology; reviews; silicon-on-insulator; SOI CMOS; SOI MOSFET theory; Si; active body SOI; circuit applications; dual-gate SOI; floating-body effects; fully depleted channel devices; low voltage applications; low-power technology; partially depleted channel devices; CMOS technology; Capacitance; Delay; Dielectric substrates; Inverters; MOSFET circuits; Permission; Power MOSFET; Silicon on insulator technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design, 1997. Proceedings., 1997 International Symposium on
Conference_Location
Monterey, CA, USA
Print_ISBN
0-89791-903-3
Type
conf
Filename
621302
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