Title :
RF and Noise Performance of Multiple-Gate SOI MOSFETs
Author :
Lazaro, A. ; Iniguez, B.
Author_Institution :
Dept. of Electron., Electrics, & Autom. Eng., Univ. Rovira i Virgili, Tarragona
Abstract :
We present a new model for single-gate (SG) SOI, cylindrical undoped (lightly doped) gate-all-around (GAA) or surrounding gate (SGT) MOSFETs and double gate fully depleted silicon-on-insulator (DG SOI) for DC, RF and noise modeling. Using this model, the single-gate, GAA and DG analog and noise performances are compared
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; silicon-on-insulator; DC modeling; RF modeling; cylindrical undoped MOSFET; double gate fully depleted silicon-on-insulator; gate-all-around MOSFET; multiple-gate SOI MOSFET; noise modeling; semiconductor device models; single-gate SOI; surrounding gate MOSFET; Electron mobility; Electronic mail; FinFETs; Integrated circuit noise; MOSFETs; Microwave integrated circuits; Production; Radio frequency; Radiofrequency integrated circuits; Silicon on insulator technology; MOS transistors; Modeling; Noise; SOI;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282815
