DocumentCode :
3158245
Title :
New de-embedding technique based on Cold-FET measurement
Author :
Pailloncy, G. ; Raskin, J. -P
Author_Institution :
Microwave Lab., Univ. catholique de Louvain, Louvain-la-Neuve
fYear :
2006
fDate :
10-13 Sept. 2006
Firstpage :
460
Lastpage :
463
Abstract :
In this paper, we present a new de-embedding technique which does not require any dedicated RF test structure. This leads to great reduction of surface area on the wafer. Furthermore, this technique allows us to break through the re-contacting and dispersion problems that might affect the RF performance accuracy of future devices
Keywords :
S-parameters; field effect transistors; Cold-FET measurement; de-embedding technique; field effect transistors; high frequency performances; Calibration; Circuit testing; Equivalent circuits; FETs; Microwave integrated circuits; Microwave measurements; Microwave theory and techniques; Performance evaluation; Radio frequency; Scattering parameters; de-embedding technique; field effect transistors; high frequency performances;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
Type :
conf
DOI :
10.1109/EMICC.2006.282682
Filename :
4057676
Link To Document :
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