DocumentCode :
3158288
Title :
LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs
Author :
Maneux, C. ; Grandchamp, B. ; Labat, N. ; Touboul, A. ; Riet, M. ; Godin, J. ; Bove, Ph
Author_Institution :
IXL, UMR CNRS, Talence
fYear :
2006
fDate :
10-13 Sept. 2006
Firstpage :
468
Lastpage :
471
Abstract :
This paper presents the first attempt to analyze low frequency noise of InP/GaAsSb/InP HBT compare with InP/InGaAs/InP HBT one. Extraction of the pre-eminent current noise source, SiB occurring at the emitter-base junction area is realized. The 1/f noise is considered as a technological figure-of-merit and Lorentzian shape noise is investigated
Keywords :
1/f noise; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device noise; 1/f noise; HBT; InP-GaAsSb-InP; InP-InGaAs-InP; LF noise analysis; Lorentzian shape noise; low noise measurements; pre-eminent current noise source; technological figure-of-merit; DH-HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Noise shaping; InP HBT; Low noise measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
Type :
conf
DOI :
10.1109/EMICC.2006.282684
Filename :
4057678
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3158288
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