Title :
Performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordheim stress
Author :
Fishbein, Bruce J. ; Jackson, Daniel B.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
The performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordhein stress is discussed. The measured performance parameters include threshold voltage, peak transconductance, and saturation-region drain current. For moderate degradation levels (up to 10% decrease in saturation current), the degradation was found to be a universal function to the injected electron charge, independent of the stress voltage for DC stress and independent of the stress waveform for pulsed stress conditions.<>
Keywords :
failure analysis; insulated gate field effect transistors; semiconductor device testing; tunnelling; DC stress; MOS transistors; Si-SiO/sub 2/; VLSI; dielectric failure; injected electron charge; measured performance parameters; moderate degradation levels; nMOSFET; peak transconductance; performance degradation; pulsed Fowler-Nordheim stress; pulsed stress conditions; saturation-region drain current; stress voltage; stress waveform; threshold voltage; universal function; Current measurement; Degradation; Dielectrics and electrical insulation; Electric breakdown; Failure analysis; MOSFETs; Pulse measurements; Stress measurement; Threshold voltage; Transconductance;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66080
