On-Chip Spiral Inductors and Metal-Air-Metal Capacitors in Suspended Technology

Author

Leblond, Herve ; Blondy, Pierre ; Baillargeat, Dominique

Author_Institution

XLIM, Limoges Univ.

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

44

Lastpage

47

Abstract

This paper presents a new suspended technology applied to the design of novel spiral inductors on silicon substrate and metal-air-metal capacitors. The RF characteristics of the fabricated inductors have been measured. We have achieved a high Q factor of 27 with an inductance of 3.7 nH. Equivalent circuit parameters have been extracted using a conventional lumped-element model. We demonstrate that the process can also be applied to metal-air-metal capacitor. This technology is CMOS-compatible and the elements can be used to design filters at low gigahertz frequencies

Keywords

Q-factor; capacitors; equivalent circuits; inductors; lumped parameter networks; silicon; CMOS technology; Q factor; RF characteristics; equivalent circuit parameters; lumped-element model; metal-air-metal capacitors; on-chip spiral inductors; silicon substrate; suspended technology; CMOS technology; Capacitors; Equivalent circuits; Filters; Inductance; Inductors; Q factor; Radio frequency; Silicon; Spirals; Inductor; capacitor; quality factor; resists; self resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281177

Filename

4057742