Title :
Relationships between thermal treatment and properties of PLT thin films
Author :
Liu, Yun ; Zhang, Liangying ; Yao, Xi
Author_Institution :
EMRL, Xi´´an Jiaotong Univ., China
Abstract :
The effect of thermal treatment conditions on the structures and properties of PLT10 thin films are presented in this paper. Better ferroelectric properties could be obtained when the film is heated up to 600°C with 3°C/min and held there for one hour. Better dielectric properties were observed when the film is heated up to 550°C with 3°C/min and held there for one hour
Keywords :
crystal microstructure; dielectric losses; ferroelectric materials; ferroelectric thin films; heat treatment; lanthanum compounds; lead compounds; permittivity; piezoelectric materials; piezoelectric thin films; 550 degC; 600 degC; PLT thin films; PbTaTiO3; dielectric properties; ferroelectric properties; properties; structure; thermal treatment; Dielectric substrates; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Grain size; Semiconductor thin films; Silicon; Sputtering; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522418
