DocumentCode
316055
Title
Photoluminescence spectra of high temperature vacuum annealed porous silicon
Author
Dimitrov, D.B. ; Papadimitriou, D. ; Beshkov, G.
Author_Institution
Inst. of Solid State Phys., Sofia, Bulgaria
Volume
1
fYear
1997
fDate
14-17 Sep 1997
Firstpage
91
Abstract
The photoluminescence (PL) spectra of porous silicon layers annealed for 15 to 180 sec in vacuum at temperatures above 800°C are presented. The experimental spectra consist of two main PL bands at 1.8 eV and 2.2 eV. The 2.2 eV band is independent of the annealing time and origins from silicon nanocrystallites. The 1.8 eV band decreases with increasing annealing time following second-order kinetics, typical for silicon dihydride decomposition
Keywords
annealing; elemental semiconductors; nanostructured materials; photoluminescence; porous materials; silicon; 800 C; Si; high temperature vacuum annealing; kinetics; nanocrystallites; photoluminescence spectra; porous silicon; silicon dihydride decomposition; Annealing; Circuits; Etching; Hydrogen; Kinetic theory; Photoluminescence; Photonic band gap; Silicon; Temperature; Tires;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625188
Filename
625188
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