Title :
AlGaAs/GaAs heterojunction bipolar transistor reliability: Device modeling and SPICE simulation
Author :
Liou, J.J. ; Sheu, S. ; Huang, C.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
The physical mechanisms contributing to the reliability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) are investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e., burn-in test)
Keywords :
III-V semiconductors; SPICE; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; leakage currents; semiconductor device models; semiconductor device reliability; semiconductor device testing; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor; SPICE circuit simulation; abnormal base current; burn-in test; device model; electrical stress; leakage current; reliability; thermal stress; Circuit simulation; Circuit testing; Doping; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; Photonic band gap; SPICE; Stress; Temperature measurement;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625223
