Analysis of the linear and nonlinear time response of a P-i-N photodiode by a two-valley model

Author

Matavulj, P.S. ; Gvozdic, Dejan M. ; Radunovic, J.B.

Author_Institution

Fac. of Electr. Eng., Belgrade Univ., Serbia

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

331

Abstract

The linear and nonlinear time response of a P-i-N photodiode are analyzed in this paper, using the complete phenomenological model for two-valley semiconductors. The analysis has been carried out for several energies of incident pulse excitation, including variations of photodiode thickness. The influence of nonlinear and nonstationary effects is shown. For smaller thicknesses of absorption layer, the nonstationary effects are negligible and nonlinear effects are prominent for larger incident pulse excitation, but for larger thicknesses of absorption layer, the presence of nonstationary effects amplifies nonlinearity and slows down the time response for low incident pulse excitation

Keywords

p-i-n photodiodes; semiconductor device models; PIN photodiode; absorption layer; incident pulse excitation; linear time response; nonlinear effects; nonlinear time response; nonstationary effects; phenomenological model; photodiode thickness variation; two-valley model; two-valley semiconductors; Absorption; Delay; Ear; Electrons; Equations; PIN photodiodes; Photodetectors; Pulse amplifiers; Time factors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625263

Filename

625263