Title :
Analysis of the linear and nonlinear time response of a P-i-N photodiode by a two-valley model
Author :
Matavulj, P.S. ; Gvozdic, Dejan M. ; Radunovic, J.B.
Author_Institution :
Fac. of Electr. Eng., Belgrade Univ., Serbia
Abstract :
The linear and nonlinear time response of a P-i-N photodiode are analyzed in this paper, using the complete phenomenological model for two-valley semiconductors. The analysis has been carried out for several energies of incident pulse excitation, including variations of photodiode thickness. The influence of nonlinear and nonstationary effects is shown. For smaller thicknesses of absorption layer, the nonstationary effects are negligible and nonlinear effects are prominent for larger incident pulse excitation, but for larger thicknesses of absorption layer, the presence of nonstationary effects amplifies nonlinearity and slows down the time response for low incident pulse excitation
Keywords :
p-i-n photodiodes; semiconductor device models; PIN photodiode; absorption layer; incident pulse excitation; linear time response; nonlinear effects; nonlinear time response; nonstationary effects; phenomenological model; photodiode thickness variation; two-valley model; two-valley semiconductors; Absorption; Delay; Ear; Electrons; Equations; PIN photodiodes; Photodetectors; Pulse amplifiers; Time factors; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625263
