• DocumentCode
    3162005
  • Title

    Impact of lightning impulse voltage on polycrystalline silicon photovoltaic modules

  • Author

    Taosha Jiang ; Grzybowski, S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Mississippi State Univ., Starkville, MS, USA
  • fYear
    2013
  • fDate
    7-11 Oct. 2013
  • Firstpage
    287
  • Lastpage
    290
  • Abstract
    Lightning is one of the factors that cause Photovoltaic (PV) system to fail. Both direct lightning strike and lightning induced voltages pose electrical stress to the PV system. The PV modules inside PV systems, like any other electric equipment, will be degraded under this stress. In this paper, experiments of applying standard lightning impulse voltages 1.2/50 μs of positive polarity (peak voltage 15 V, 30 V, and 90 V) on a type of polycrystalline silicon photovoltaic module were performed. Comparisons of their dark I-V characteristics curves and I-V characteristics are presented. Studies show that the repeated impulse stresses causes a drop in the modules power output when the stress voltage is 30 V and 90 V.
  • Keywords
    elemental semiconductors; lightning protection; photovoltaic power systems; silicon; solar cells; PV system; direct lightning strike; electric equipment; electrical stress; impulse stress; lightning impulse voltage; lightning induced voltage; polycrystalline silicon photovoltaic module; Current measurement; Lightning; Photovoltaic systems; Resistance; Semiconductor device measurement; Testing; Voltage measurement; electrical degradation; induced overvoltage; lightning impulse; photovoltaic modules;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lightning Protection (XII SIPDA), 2013 International Symposium on
  • Conference_Location
    Belo Horizonte
  • Print_ISBN
    978-1-4799-1343-5
  • Type

    conf

  • DOI
    10.1109/SIPDA.2013.6729225
  • Filename
    6729225