DocumentCode :
3162571
Title :
A novel low-stress driven technique for on-panel TFT gate driver
Author :
Huang, Nan Xiong ; Shiau, Miin Shyue ; Chen, Po Hung ; Wu, Hong-Chong ; Hsu, Heng-Shou ; Liu, Don Gey
Author_Institution :
Grad. Inst. of Electr. & Commun. Eng., Feng Chia Univ., Taichung, Taiwan
fYear :
2011
fDate :
8-10 Aug. 2011
Firstpage :
3675
Lastpage :
3678
Abstract :
In this paper, we propose a novel low-stress technique on-panel display gate driver. In the past, our group proposed the gate driver consists of dual pull-down, anti-fluctuating, flash pull-down transistor and low driving voltage design. This would make the circuit area too large. Therefore, we only solve the stress effect of pull down transistor. The novel circuit not only reduce 46% circuit area but also maintain the same lifetime of gate driver.
Keywords :
driver circuits; stress effects; thin film circuits; thin film transistors; antifluctuating transistor; dual pull-down transistor; flash pull-down transistor; low driving voltage design; low-stress driven technique; on-panel TFT display gate driver; Logic gates; Noise; Stress; Thin film transistors; Threshold voltage; Voltage control; gate driver; low-stress technique; stress effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Artificial Intelligence, Management Science and Electronic Commerce (AIMSEC), 2011 2nd International Conference on
Conference_Location :
Deng Leng
Print_ISBN :
978-1-4577-0535-9
Type :
conf
DOI :
10.1109/AIMSEC.2011.6010009
Filename :
6010009
Link To Document :
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