DocumentCode :
3163512
Title :
Guidelines For Latch-up Characterization Techniques
Author :
Reczek, W. ; Pribyl, W.
Author_Institution :
Siemens AG
fYear :
1988
fDate :
22-23 Feb. 1988
Firstpage :
120
Lastpage :
125
Keywords :
Bipolar transistors; Breakdown voltage; Capacitors; Circuit synthesis; Circuit testing; Guidelines; Inverters; Photoconductivity; Random access memory; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1988. ICMTS. Proceedings of the 1988 IEEE International Conference on
Conference_Location :
Long Beach, CA, USA
Type :
conf
DOI :
10.1109/ICMTS.1988.672946
Filename :
672946
Link To Document :
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