Title :
Test Circuit Structures For Characterizing The Effects Of Localized Hot-carrier-induced Charge In VLSI Switching Circuits
Author :
Suehle, J.S. ; Galloway, K.F.
Author_Institution :
National Bureau Of Standards
Keywords :
Circuit testing; Degradation; Hot carrier effects; Hot carriers; Inverters; MOS devices; MOSFETs; Stress; Switching circuits; Very large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1988. ICMTS. Proceedings of the 1988 IEEE International Conference on
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/ICMTS.1988.672947
