Title :
Transient thermal effects into a 155 kg POLIX ingot [for solar cells]
Author :
Laugier, A. ; Borne, E. ; El Omari, H. ; Goaer, G. ; Sarti, D.
Author_Institution :
Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
The POLIX process has been adapted to produce high quality and high capacity multicrystalline silicon ingots with large vertically oriented columnar grains for solar cell production. This paper describes the recently developed 155 kg ingot unidirectional solidification process conditions and also the main features of material characterization. Furthermore, after thermal studies based on heat flow motions, the relevant parameters have been optimized so that the solid-liquid interface is planar and its growth rate is quite constant. Determination of dislocation density is analysed in term of thermal analysis giving the temperature distribution in the ingot during the growth and in the last phase of crystallization and cooling
Keywords :
cooling; crystallisation; directional solidification; dislocation density; elemental semiconductors; manufacturing processes; semiconductor device manufacture; silicon; solar cells; temperature distribution; thermal analysis; 155 kg; POLIX ingot; Si; cooling phase; crystallization phase; dislocation density; heat flow motions; material characterization; multicrystalline silicon ingots; planar solid-liquid interface; semiconductor; solar cell production; solid-liquid interface growth rate; temperature distribution; thermal analysis; transient thermal effects; unidirectional solidification process conditions; vertically oriented columnar grains; Boron; Conductivity; Crystallization; Electronics cooling; Photovoltaic systems; Semiconductor process modeling; Silicon compounds; Solar power generation; Temperature distribution; Thermal stresses;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564080