Title :
Resistive Memory Sensing Using Delta-Sigma Modulation
Author :
Rapole, H. ; Rajagiri, A. ; Balasubramanian, M. ; Campbell, K.A. ; Baker, R.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID
Abstract :
The design of four resistive memory sensing circuit topologies employing delta-sigma (DeltaSigma) modulation are presented. Operation of the designs and a comparison between simulations and experimentation is given. The designs were fabricated in a 500 nm CMOS process. Measured results indicate that the resistive values ranging from a chosen reference resistance to several hundred kOmega can be sensed reliably.
Keywords :
CMOS memory circuits; delta-sigma modulation; CMOS process; circuit topologies; delta-sigma modulation; resistive memory sensing; size 500 nm; Capacitors; Circuit simulation; Circuit topology; Delta modulation; Delta-sigma modulation; Electrical resistance measurement; Logic; Nonvolatile memory; Phase change random access memory; Voltage;
Conference_Titel :
Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-3551-7
Electronic_ISBN :
978-1-4244-3552-4
DOI :
10.1109/WMED.2009.4816149
