Title :
Fabrication and I-V characterization of metal/SAM/metal devices
Author :
Majima, Y. ; Sasao, K. ; Azuma, Y. ; Miyamoto, Y.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
We fabricate Au/SAM/Au devices by using an EB lithography and demonstrate the current-voltage (I/sub DS/-V/sub DS/) characteristics.
Keywords :
gold; metal-semiconductor-metal structures; molecular electronics; monolayers; organic semiconductors; self-assembly; Au; EB lithography; I-V characterization; current-voltage characteristics; fabrication; metal/SAM/metal devices; Electrodes; Fabrication; Gold; Lithography; OFETs; Scanning electron microscopy; Self-assembly; Transconductance; Transistors; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178537
