The Gated, Single-Tip Silicon Field Emitter as a Probe for Investigating the Defect Dynamics of Thin Insulators

Author

Busta, Heinz H.

Author_Institution

Sarnoff Corporation

fYear

1997

fDate

17-21 Aug. 1997

Firstpage

235

Lastpage

238

Keywords

Delay; Etching; Fluctuations; Insulation; MOS devices; Metal-insulator structures; Probes; Resists; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International

Conference_Location

Kyongju, Korea

Print_ISBN

0-7803-3786-7

Type

DOI

10.1109/IVMC.1997.627513

Filename

627513

Link To Document