DocumentCode :
3164936
Title :
A CMOS 40 MHz 8 b 105 mW two-step ADC
Author :
Fukushima, N. ; Yamada, T. ; Kumazawa, N. ; Hasegawa, Y. ; Soneda, M.
Author_Institution :
Sony Corp., Atsugi, Japan
fYear :
1989
fDate :
15-17 Feb. 1989
Firstpage :
14
Lastpage :
15
Abstract :
To meet the demand for digital signal processing of wideband video signals, a 40-MHz, 8-b ADC (analog/digital converter) with 105-mW power consumption on a 4.88-mm/sup 2/ chip has been developed using a 1.4- mu m standard-cell CMOS process. To obtain 8-b fast conversion, the ADC uses a sample-and-hold comparator with an averaging feature for differential linearity for high-speed sampling and high-frequency inputs and an expanded fine comparison to increase conversion speed. The block diagram of the converter is shown together with two techniques employed to increase conversion speed. The DC linearity of the converter at a 40-MHz conversion rate is shown. The limit of differential linearity is less than +or-0.5 least significant bit for 8 b. The measured power consumption as a function of sampling frequency and supply voltage is also shown. For 40-MHz sampled at a supply voltage of 5 V, the power consumed is 105 mW. For 14.3-MHz sampling at 3.5 V, the consumption drop to 27 mW.<>
Keywords :
CMOS integrated circuits; analogue-digital conversion; digital integrated circuits; video signals; 1.4 micron; 105 mW; 8 bit; DC linearity; analog/digital converter; averaging feature; conversion rate; conversion speed; differential linearity; digital signal processing; high-frequency inputs; high-speed sampling; power consumption; sample-and-hold comparator; sampling frequency; standard-cell CMOS process; two-step ADC; wideband video signals; Analog-digital conversion; CMOS process; Digital signal processing chips; Energy consumption; Linearity; Power measurement; Sampling methods; Signal processing; Voltage; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC., 1989 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1989.48213
Filename :
48213
Link To Document :
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