DocumentCode :
316500
Title :
A Model for Field -Emission from P-Type Silicon
Author :
Qin-An Huan ; Ming Qin ; Bin Zhang
Author_Institution :
Microelectronics Center, Southeast University
fYear :
1997
fDate :
17-21 Aug. 1997
Firstpage :
291
Lastpage :
295
Keywords :
Cathodes; Electric breakdown; Electron emission; Impact ionization; Microelectronics; Resistance heating; Silicon compounds; Space charge; Tunneling; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
Type :
conf
DOI :
10.1109/IVMC.1997.627563
Filename :
627563
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=316500
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