DocumentCode
316503
Title
Theoretical Study of Field Emission from GaN
Author
Chung, M.S. ; Yoon, B. G. ; Park, J. M.
Author_Institution
Department of Physics, University of Ulsan
fYear
1997
fDate
17-21 Aug. 1997
Firstpage
305
Lastpage
309
Keywords
Doping; Electric breakdown; Electrodes; Electron emission; Gallium nitride; III-V semiconductor materials; Physics; Poisson equations; Semiconductor device breakdown; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location
Kyongju, Korea
Print_ISBN
0-7803-3786-7
Type
conf
DOI
10.1109/IVMC.1997.627572
Filename
627572
Link To Document