Title :
Formation of Mo Silicide on Poly-Si Field Emitters for Improved Emission Stability
Author :
Uh, Hyung Soo ; Park, Byung Gook ; Lee, Jong Duk
Author_Institution :
Inter-University Semiconductor Research Center(lSRC), Seoul National University
Keywords :
Annealing; Gases; Oxidation; Silicides; Silicon; Stability; Surface contamination; Surface morphology; Temperature; Thermal conductivity;
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
DOI :
10.1109/IVMC.1997.627598
