Title :
Reliable extraction of small-signal elements of a generalized distributed FET model
Author_Institution :
Fachgebiet Hochfrequenztech., Kassel Univ., Germany
Abstract :
This paper presents a new approach for the reliable determination of the small-signal parameter values of a generalized distributed FET model. For the first time it is shown that unique and physically relevant values for all parameters can be obtained, including the bias-dependent series resistances and the distributed parts of the effective gate-source and drain-source capacitance. The approach has been validated with respect to various FETs with different gate-lengths (0.5 /spl mu/m-0.12 /spl mu/m) in different measurement environment (in-fixture, on-wafer). Exemplary results for a wire-bonded 0.5 /spl mu/m-gate MESFET and a MMIC 0.12 /spl mu/m-gate HEMT are presented and discussed.
Keywords :
Schottky gate field effect transistors; capacitance; equivalent circuits; field effect transistors; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 0.12 to 0.5 micron; MMIC HEMT; bias-dependent series resistances; effective drain-source capacitance; effective gate-source capacitance; generalized distributed FET model; small-signal parameters extraction; wire-bonded MESFET; Capacitance measurement; Circuit topology; Equivalent circuits; Frequency measurement; HEMTs; Inductance; Microwave FETs; Network topology; Parameter extraction; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689377
