DocumentCode
3165653
Title
Real time monitoring of initial thermal oxidation on Si[001] surface by synchrotron radiation photoemission spectroscopy
Author
Yoshigoe, A. ; Moritani, K. ; Teraoka, Y.
Author_Institution
Synchrotron Radiat. Res. Center, Japan Atomic Energy Res. Inst., Hyogo, Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
210
Lastpage
211
Abstract
We present the real time observation of oxidation states derived from Si-2p core-level shifts and the oxygen amounts evaluated from O- 1s by using synchrotron radiation photoemission spectroscopy, which was performed during the thermal oxidation utilizing O/sub 2/ gas on Si[001] surface over 855 K substrate temperature regions.
Keywords
X-ray photoelectron spectra; elemental semiconductors; oxidation; silicon; 855 K; Si; Si-2p core-level shifts; SiO/sub 2/; Si[001] surface; initial thermal oxidation; real time monitoring; synchrotron radiation photoemission spectroscopy; thermal oxidation; Atomic measurements; Chemistry; Kinetic theory; MOSFETs; Oxidation; Photoelectricity; Radiation monitoring; Spectroscopy; Synchrotron radiation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178618
Filename
1178618
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