مرکز منطقه ای اطلاع رساني علوم و فناوري - Emission Property of Nitrogen Implanted Diamond

DocumentCode :

316585

Title :

Emission Property of Nitrogen Implanted Diamond

Author :

Yuan, G. ; Jin, C.C. ; Jin, Y.X. ; Gu, C.Z. ; Ji, H. ; Zhang, B.L. ; Zhou, T.M. ; Jiang, H. ; Wang, Y.Z. ; Wang, W.B. ; Li, J.S.

Author_Institution :

Changchun Institute of Physics, Chinese Academy of Sciences

fYear :

1997

fDate :

17-21 Aug. 1997

Firstpage :

697

Lastpage :

700

Keywords :

Annealing; Anodes; Cathodes; Electron emission; Nitrogen; Physics; Semiconductor films; Temperature; Voltage; X-ray scattering;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International

Conference_Location :

Kyongju, Korea

Print_ISBN :

0-7803-3786-7

Type :

conf

DOI :

10.1109/IVMC.1997.627679

Filename :

627679

Link To Document :