DocumentCode :
316596
Title :
Fabrication of GaN field emitter arrays by selective area growth technique
Author :
Kozawa, Takahno ; Suzuki, Motofumi ; Taga, Yasunori ; Gotoh, Yasuhito ; Ishikawa, Junzo
Author_Institution :
TOYOTA Central R&D Labs., Inc., Nagakute-cho
fYear :
1997
fDate :
17-21 Aug. 1997
Firstpage :
750
Lastpage :
753
Keywords :
Epitaxial growth; Epitaxial layers; Fabrication; Field emitter arrays; Gallium nitride; Hydrogen; Microstructure; Plasma temperature; Research and development; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
Type :
conf
DOI :
10.1109/IVMC.1997.627690
Filename :
627690
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=316596
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