DocumentCode
316596
Title
Fabrication of GaN field emitter arrays by selective area growth technique
Author
Kozawa, Takahno ; Suzuki, Motofumi ; Taga, Yasunori ; Gotoh, Yasuhito ; Ishikawa, Junzo
Author_Institution
TOYOTA Central R&D Labs., Inc., Nagakute-cho
fYear
1997
fDate
17-21 Aug. 1997
Firstpage
750
Lastpage
753
Keywords
Epitaxial growth; Epitaxial layers; Fabrication; Field emitter arrays; Gallium nitride; Hydrogen; Microstructure; Plasma temperature; Research and development; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location
Kyongju, Korea
Print_ISBN
0-7803-3786-7
Type
conf
DOI
10.1109/IVMC.1997.627690
Filename
627690
Link To Document