Title :
RF LDMOS Power Amplifier Integrated Circuit for W-CDMA/TD-SCDMA applications
Author :
Bagger, Reza ; Shih, Chuming David ; Yu, Yinglei ; Sjostrom, Johan ; Andersson, Paul
Author_Institution :
Infineon Technol. Nordic AB, Kista
Abstract :
This article presents an LDMOS power amplifier integrated circuit for W-CDMA/TD-SCDMA applications. The IC has been developed in Infineon´s Si LDMOS IC technology. The gain achieved was 27 dB. When tuned for TD-SCDMA, the IC showed 50 W PEP at IM3 = -30 dBc (two-tone). When tuned for W-CDMA, it showed 40 W PEP at IM3 = -30 dBc (two-tone) and 400 MHz bandwidth (20%) around 2100 MHz. The PA IC has been characterized under all typical modulation formats, and is included in Infineon´s product portfolio of power ICs for radio base stations
Keywords :
MOS integrated circuits; UHF integrated circuits; UHF power amplifiers; code division multiple access; power integrated circuits; radio transmitters; 27 dB; 40 W; 400 MHz; 50 W; Infineon Si LDMOS IC technology; RF LDMOS power amplifier integrated circuit; TD-SCDMA applications; W-CDMA; power integrated circuit; radio base stations; Application specific integrated circuits; Bandwidth; Integrated circuit technology; Modulation; Multiaccess communication; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Time division synchronous code division multiple access; IC; LDMOS; TD-SCDMA; W-CDMA; broadband; power amplifier;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281265
