DocumentCode :
316599
Title :
Fabrication of Transfer Mold Field Emitter Array in Hig,h Emitter Density
Author :
Hasegawa, Toshimichi ; Fukuda, Katsuyoshi ; Nakamoto, Masakazu
Author_Institution :
Materials & Devices Research Labs, Research & Development Center, Toshiba Corporation
fYear :
1997
fDate :
17-21 Aug. 1997
Firstpage :
763
Lastpage :
767
Keywords :
Anisotropic magnetoresistance; Breakdown voltage; Etching; Fabrication; Field emitter arrays; Insulation; Low voltage; Microelectronics; Shape; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
Type :
conf
DOI :
10.1109/IVMC.1997.627693
Filename :
627693
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=316599
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