Title :
High PAE and low intermodulation distortion performance of newly developed GaAs FETs using ion implantation process
Author :
Takagi, Kazutaka ; Kimura, Hideki ; Ohmori, Tomohito ; Yamamura, Takuji
Author_Institution :
Microwave Solid-state Eng. Dept, Toshiba Corp., Kawasaki, Japan
Abstract :
Ion-implantation GaAs MESFETs were improved for Ku-band applications. Over 20% of the power added efficiency (PAE) was achieved at -25 dBc of third order of intermodulation distortion ratio (IM3) at 14.5 GHz. In order to achieve high PAE and low IM3, the carrier profile was designed by using ion-implantations and the transconductance (gm) along the load-line was measured. This PAE was 5% higher than conventional MESFET, HFET and pHEMT.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; intermodulation distortion; ion implantation; microwave field effect transistors; IM3; MESFETs; PAE; carrier profile; frequency 14.5 GHz; intermodulation distortion ratio third order; ion implantation; load-line; power added efficiency; transconductance; Distortion measurement; FETs; Gallium arsenide; HEMTs; Intermodulation distortion; Ion implantation; MESFETs; MODFETs; PHEMTs; Transconductance; GaAs; IM3; Ion-implantation; MESFET; PAE;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384312
