A meshless method for physical simulation of semiconductor devices

This paper describes a meshless method for the two-dimensional time-dependent simulation of semiconductor devices. In this method the solution is approximated using global radial basis functions (RBF) and distributed quasi-random points can be used. This allows the computation of problems with complex-shaped boundaries and forming fine and coarse points abundance in locations where variable solutions change rapidly and slowly, respectively. As the first step in the performance investigation, we use the electrons flow equations in the absence of holes and recombination in this paper.