DocumentCode
3166254
Title
Dependence of outgassing characters at 157 nm on resist structures
Author
Matsui, Y. ; Umeda, S. ; Seki, S. ; Tagawa, S. ; Ishikawa, S. ; Itani, T.
Author_Institution
Sci. & Ind. Res., Osaka Univ., Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
264
Lastpage
265
Abstract
The authors examined the dependence of outgassing characteristics at 157 nm exposure against the position of alicyclic compounds and fluorine in the resist base polymers of ArF and F/sub 2/ resists, using in-situ quadrupole mass spectrometry. The dependence of the total amount of outgassed species against the polymer structures are also investigated.
Keywords
argon compounds; fluorine; mass spectroscopy; nanolithography; outgassing; photolithography; photoresists; polymer films; 157 nm; 157 nm exposure; ArF; ArF resist; F/sub 2/; F/sub 2/ resist; alicyclic compounds; in-situ quadrupole mass spectrometry; outgassing characteristics; polymer structure; resist base polymers; resist structure; Character generation; Conductors; Contamination; Mass spectroscopy; Niobium; Particle beam optics; Polymers; Resists; Sociotechnical systems; Spine;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178644
Filename
1178644
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