DocumentCode :
3166260
Title :
A novel self-biased low noise amplifier with current-reused technique for X band applications
Author :
Yang, Chin-Lung ; Hsieh, Tsung-Han ; Chiang, Yi-Chyun
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2009
fDate :
7-10 Dec. 2009
Firstpage :
1667
Lastpage :
1670
Abstract :
A low-noise amplifier (LNA) employing novel self-biased shunt-feedback mechanism for X band applications is presented. The shunt-shunt feedback impedance is not only used to eliminate the use of gate-biased voltage, but also neutralize the miller capacitor of the input transistor. With combining current-reused technique into the amplifier, it is benefit to boost power gain and maintain low power consumption. A source-degeneration inductor is also introduced at the input transistor to ensure good input matching and stability across the required bandwidth. A prototype was fabricated in 0.18-¿m CMOS process to demonstrate the proposed LNA architecture. The measurements show that a maximum power gain of 10 dB, a minimum noise figure (NF) of 4.5 dB, -6 dBm input-referred third-order intercept point (IIP3), and drawing 7.6 mA from a 1.8-V supply.
Keywords :
CMOS integrated circuits; capacitors; inductors; low noise amplifiers; CMOS process; X band applications; current 7.6 mA; current-reused technique; gate-biased voltage eliminattion; input transistor; input-referred third-order intercept point; miller capacitor; power consumption; power gain; self-biased low noise amplifier; shunt-shunt feedback impedance; size 0.18 mum; source-degeneration inductor; voltage 1.8 V; Bandwidth; Capacitors; Energy consumption; Feedback; Impedance matching; Inductors; Low-noise amplifiers; Noise measurement; Stability; Voltage; CMOS; current-reused technique; low noise amplifier (LNA); shunt-feedback impedance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
Type :
conf
DOI :
10.1109/APMC.2009.5384321
Filename :
5384321
Link To Document :
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