Analysis On High-Coupling Transformer in Silicon-Based Technology

Author

Hsu, Heng-Ming ; Chang, Jeng-Zen ; Tseng, Chien-Wen ; Huang, Kuo-Hsun

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1391

Lastpage

1394

Abstract

This work proposes a transformer structure with high-coupling, and small chip area characteristics using current silicon-based technology. The proposed device has tight coupling (k = 0.92), and minimum chip area (O.D. =140 mum) characteristics. In order to understand this device operation in high frequency, an equivalent circuit is developed to extract the model parameters. Based on the proposed transformer in this work, this device is helpful in designing RF integrated circuits for system-on-a-chip applications

Keywords

CMOS integrated circuits; equivalent circuits; integrated circuit modelling; radiofrequency integrated circuits; silicon; transformers; CMOS technology; RF integrated circuits; equivalent circuit; high-coupling transformer; modeling parameters; silicon-based technology; small chip area characteristics; system-on-a-chip; tight coupling; CMOS technology; Coils; Coupling circuits; Dielectrics; Equivalent circuits; MIM capacitors; Metal-insulator structures; Radio frequency; Radiofrequency integrated circuits; Spirals; Equivalent circuit; high-coupling; modeling parameters; silicon-based; transformer; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281296

Filename

4058094