DocumentCode :
3166471
Title :
Anti-shrinkage coating approach as a solution provider to ArF resists
Author :
Si-Hyeung Lee ; Hyung-Do Kim ; Sang-Jun Choi ; Jung-Hyeon Lee ; Han-Ku Cho ; Woo-Sung Han ; Joo-Tae Moon
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fYear :
2002
fDate :
6-8 Nov. 2002
Firstpage :
278
Abstract :
Summary form only given. The authors present an anti-shrinkage coating (ASC) approach as a solution provider to improve the shrinkage of ArF resists during critical dimension (CD) measurement. Aqueous ASC material consists of anti-shrinking water-soluble polymers and other additives (e.g. cross-linker) and is coated and baked on the developed wafer and rinsed by deionised water. ASC was applied to two 193 nm resist systems and the shrinkages are about 7-8 nm after 50 measurements in the same SEM conditions as for measuring KrF resists. The line shrinkage of the ASC was improved by 70% compared to that of the ArF resist. In addition, the pattern fidelity and LER, which are serious problems for ArF resists, were also improved by the ASC process.
Keywords :
argon compounds; coating techniques; krypton compounds; nanolithography; photoresists; polymer films; shrinkage; 193 nm; 7 to 8 nm; ArF; ArF resists; KrF; KrF resists; SEM conditions; anti-shrinkage coating; critical dimension measurement; cross-linker additives; line shrinkage; pattern fidelity; water-soluble polymers; Coatings; Metrology; Polymer films; Research and development; Size measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
Type :
conf
DOI :
10.1109/IMNC.2002.1178651
Filename :
1178651
Link To Document :
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