DocumentCode
3166606
Title
Effects of O2/C2F6 plasma descum with RF cleaning on via formation in MCM-D substrate using photosensitive BCB
Author
Ju, Chul-Won ; Park, Seong-Su ; Kim, Seong-Jin ; Pack, Kyu-Ha ; Lee, Hee-Tae ; Song, Min-Kyu
Author_Institution
Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fYear
2001
fDate
2001
Firstpage
1216
Lastpage
1218
Abstract
In this paper, we present the effect of plasma descum by O2 /C2F6 gas mixture on the via formation of photosensitive BCB layer and compare it with that of RF cleaning. Test vehicle was fabricated on Si wafer with Cu/photosensitive BCB layer structure and ECR-CVD system was used to descum the via. Residues at via bottom after the descum process were investigated by AES (auger electron microscope) and SEM (scanning electron microscope). It is shown in this work that O2/C2F6 plasma etching and the RF cleaning are effective for organic C, native C respectively, therefore the via descum by a combination of plasma etching with O2 /C2F6 gas mixture and RF cleaning can efficiently remove the via residues
Keywords
Auger electron spectra; multichip modules; organic compounds; scanning electron microscopy; sputter etching; surface cleaning; AES; Cu/photosensitive BCB layer structure; ECR-CVD system; MCM-D substrate; O2/C2F6 gas mixture; RF cleaning; SEM; Si; Si wafer; hexafluoroethane; plasma descum; plasma etching; residue analysis; via formation; Argon; Cleaning; Electronic components; Kinetic energy; Plasma applications; Plasma chemistry; Radio frequency; Sputter etching; Testing; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2001. Proceedings., 51st
Conference_Location
Orlando, FL
ISSN
0569-5503
Print_ISBN
0-7803-7038-4
Type
conf
DOI
10.1109/ECTC.2001.927983
Filename
927983
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