Title :
Optimization of gate oxide quality in CMOS SOI process
Author :
Nevin, W.A. ; Hölke, A.
Author_Institution :
X-Fab Semicond. Foundries AG, Erfurt
Abstract :
Several methods have been investigated for gettering impurities during CMOS processing, in order to achieve high-quality oxides on thick SOI. The use of buried implants, buried polysilicon, surface implants, and isolation trenches was found to significantly improve the oxide quality in each case.
Keywords :
CMOS integrated circuits; buried layers; getters; impurities; optimisation; silicon-on-insulator; CMOS SOI process; Si; buried implants; buried polysilicon; gate oxide quality; gettering impurities; isolation trenches; optimization; surface implants; Bonding; CMOS process; CMOS technology; Conference proceedings; Design for quality; Foundries; Gettering; Implants; Semiconductor impurities; Voltage;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656287
