Title :
Consistent dynamic depletion model of SOI-MOSFETs for device/circuit optimization
Author :
Kusu, S. ; Ishimura, K. ; Ohyama, K. ; Miyoshi, T. ; Hori, D. ; Sadachika, N. ; Murakami, T. ; Ando, M. ; Mattausch, H.J. ; Miura-Mattausch, M. ; Baba, S. ; Ida, J.
Author_Institution :
Hiroshima Univ., Higashi-Hiroshima
Abstract :
We report the potential-based SOI-MOSFET model HiSIM-SOI, which solves the three surface potentials of the SOI-device accurately without sacrificing simulation time. The model implements the bias dependent dynamic depletion behavior, shifting between partially-depleted (PD) and fully-depleted (FD) conditions smoothly. It is also demonstrated that the floating-body effect can be accurately captured in a simple way from the calculated surface potentials without the necessity of introducing on additional node. HiSIM-SOI is also verified to correctly reproduce measured data of both body-contact and floating-body devices.
Keywords :
MOSFET; circuit simulation; optimisation; semiconductor device models; silicon-on-insulator; surface potential; HiSIM; SOI-MOSFET; device-circuit optimization; dynamic depletion model; floating-body effect; surface potentials; Capacitance; Circuit optimization; Circuit simulation; Conference proceedings; Electrodes; Impact ionization; MOSFET circuits; Poisson equations; Silicon; Surface treatment;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656293