Title :
A revisited pseudo-MOSFET model for ultrathin SOI films
Author :
Rodriguez, N. ; Cristoloveanu, S. ; Gámiz, F.
Author_Institution :
Dept. de Electron., Univ. of Granada, Granada
Abstract :
The pseudo-MOS transistor (Psi-MOSFET) is a quick technique for monitoring SOI wafers. Based on Poisson numerical simulations, we derive updated models for the characterization of ultrathin films, accounting for the density of traps of passivated and nonpassivated surfaces. These analytical models match the experimental results and are useful for accurate parameter extraction.
Keywords :
MOSFET; Poisson equation; semiconductor device models; semiconductor thin films; silicon-on-insulator; Poisson numerical simulations; Si; nonpassivated surfaces; passivated surfaces; pseudoMOSFET model; ultrathin SOI films; Conference proceedings; Decision support systems; Quadratic programming;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656296
