Title :
Switching in ferroelectric thin films: how to extract information about domain kinetics from traditional current data
Author :
Shur, V.Ya. ; Rumyantsev, E.L. ; Makarov, S.D. ; Volegov, V.V.
Author_Institution :
Inst. of Phys. & Appl. Math., Ural State Univ., Ekaterinburg, Russia
Abstract :
In this paper we demonstrate the possibility of extracting original detail information about domain kinetics during polarization reversal in thin ferroelectric films from the switching current data. The developed method of mathematical treatment was verified by computer simulations and direct experiments in model ferroelectric single crystals
Keywords :
dielectric polarisation; digital simulation; electric domains; ferroelectric switching; ferroelectric thin films; computer simulations; current data; domain kinetics; ferroelectric thin films; mathematical treatment; model ferroelectric single crystals; polarization reversal; switching; switching current data; thin ferroelectric films; Application software; Data mining; Ferroelectric films; Ferroelectric materials; Kinetic theory; Polarization; Pulse measurements; Pulse shaping methods; Shape; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522457
