Title :
A leakage current model for SOI based floating body memory that includes the Poole-Frenkel effect
Author :
Nayfeh, Ammar ; Koldyaev, Viktor ; Beaud, Patrice ; Nagoga, Mikhail ; Okhonin, Serguei
Author_Institution :
Innovative Silicon, Santa Clara, CA
Abstract :
The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (Dit) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both Dit and electric field. It can also be extended to SOI based low power devices.
Keywords :
Poole-Frenkel effect; electric field effects; interface states; leakage currents; random-access storage; silicon-on-insulator; Poole-Frenkel effect; SOI based floating body memory; Z-RAM; electric field enhanced generation; electron hole pairs; leakage current model; oxide-SOI interface traps; power devices; retention time; Anatomy; Electron traps; Leakage current; MOS capacitors; Radiative recombination; Random access memory; Silicon; Temperature measurement; Tunneling; Voltage;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656301
