• DocumentCode
    3167476
  • Title

    Fabrication of silicon-on-insulator wafer by SIMOX layer transfer

  • Author

    Wei, Xing ; Zhang, Bo ; Chen, Meng ; Zhang, Miao ; Wang, Xi ; Lin, Chenglu

  • Author_Institution
    State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    In summary, an improved process named SIMOX layer transfer is proposed. SOI wafer with the device layer thickness of 147.5plusmn3.1 nm has been fabricated with SLT process. SE result indicates that the device layer has excellent thickness uniformity. The results of TEM show sharp interfaces and defect-free device layer, revealing the perfect structure of SLT SOI.
  • Keywords
    SIMOX; annealing; elemental semiconductors; silicon; transmission electron microscopy; wafer bonding; SIMOX layer transfer; SLT; SLT process; SOI wafer; Si; TEM; annealing; defect-free device layer; silicon-on-insulator wafer; wafer bonding; Annealing; Conference proceedings; Costs; Etching; Fabrication; Informatics; Laboratories; Silicon on insulator technology; Surface morphology; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656304
  • Filename
    4656304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167476