Title :
Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD
Author :
Keller, S. ; Keller, B.P. ; Wu, Y.F. ; Kapolnek, D. ; Masui, H. ; Kato, M. ; Imagi, S. ; Mishra, U.K. ; DenBaars, S.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We have achieved high quality InGaN epitaxial layers by atmospheric pressure MOCVD on c-plane sapphire. The indium segregation coefficient is shown to depend not only on the growth temperature, but also on the growth rate of the InGaN film. Strong band edge photoluminescence was observed for InGaN films grown at temperatures as low as 700°C with In mole fractions up to 0.20. Preliminary results are presented on blue InGaN/GaN double heterostructure LEDs
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; p-n heterojunctions; segregation; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 700 degC; InGaN-GaN; atmospheric pressure MOCVD; band edge photoluminescence; blue LEDs; c-plane sapphire; double heterostructure LEDs; epitaxial layers; growth rate; growth temperature; mole fractions; segregation coefficient; Annealing; Doping; Epitaxial growth; Gallium nitride; Laser excitation; Light emitting diodes; MOCVD; Photoluminescence; Substrates; Temperature measurement;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482420
