Title :
Investigation of the characteristics of new HBT´s under large signal excitation
Author :
Rahal, Ali ; Bosisio, R.G. ; Wu, Ke
Author_Institution :
Dept. de Genie Electr., Ecole Polytech. de Montreal, Que., Canada
Abstract :
In this paper, HBT (Heterojunction Bipolar Transistor) gain measurements under large signal excitation at 14 and 28 GHz are reported. The measurement system uses active loads in order to obtain experimental results over the entire Smith chart. Fine and repeatable variation of the loading is achieved. High power transistors with low impedances are readily measured. The system presently covers the 2-18 GHz and 26.4-40 GHz frequency bands
Keywords :
gain measurement; heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; millimetre wave bipolar transistors; millimetre wave measurement; semiconductor device testing; 2 to 40 GHz; EHF; HBT gain measurements; Ka-band; Ku-band; SHF; active load-pull measurements; active loads; heterojunction bipolar transistor; large signal excitation; Heterojunction bipolar transistors; Microwave bipolar transistors; Microwave measurements; Millimeter wave bipolar transistors; Millimeter wave measurements; Semiconductor device measurements; Semiconductor device testing;
Conference_Titel :
Electrical and Computer Engineering, 1994. Conference Proceedings. 1994 Canadian Conference on
Conference_Location :
Halifax, NS
Print_ISBN :
0-7803-2416-1
DOI :
10.1109/CCECE.1994.405815
