DocumentCode :
316757
Title :
Highly reliable 1.55-μm strain compensated multiple quantum well distributed feedback ridge waveguide lasers grown by single step MOVPE
Author :
Nakamura, Koji ; Oshiba, Saeko ; Horikawa, Hideaki
Author_Institution :
R&D Group, Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Volume :
2
fYear :
1997
fDate :
22-25 Sep 1997
Firstpage :
208
Abstract :
Strain compensated multiple quantum well distributed feedback lasers emitting at 1.55 μm have been fabricated by single step metalorganic vapor phase epitaxy on patterned substrates. The lasers demonstrate high device yield with high performance and stable operation, at a constant output power of 10 mW, over 1300 hours at 25°C and 300 hours at 50°C
Keywords :
indium compounds; 1.55 mum; 10 W; 1300 h; 25 C; 300 h; 50 C; DFB MQW lasers; InGaAsP; constant output power; high device yield; high performance; highly reliable strain compensated multiple quantum well distributed feedback ridge waveguide lasers; life testing; patterned substrates; single step MOVPE; single step metalorganic vapor phase epitaxy; stable operation,;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location :
Edinburgh
ISSN :
0537-9989
Print_ISBN :
0-85296-697-0
Type :
conf
DOI :
10.1049/cp:19971453
Filename :
628160
Link To Document :
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