Title :
Analysis of a multi-transistor interleaved Doherty amplifier
Author :
Eccleston, Kim W.
Author_Institution :
Dept of Electr. & Comput. Eng., Univ. of Canterbury, Christchurch, New Zealand
Abstract :
Interleaving of a distributed main amplifier with a distributed peaking amplifier forms a Doherty amplifier that is smaller than a conventional Doherty amplifier using these distributed amplifiers. We call this an interleaved Doherty amplifier. A theoretical analysis of a 4-FET interleaved Doherty amplifier shows load modulation occurs in both main amplifier FETs. Simulations of a 4-FET amplifier verified the theoretical analysis and showed that the interleaved Doherty amplifier to be as good as a conventional Doherty amplifier.
Keywords :
amplifiers; circuit simulation; field effect transistors; 4-FET interleaved Doherty amplifier; distributed peaking amplifier; multitransistor interleaved Doherty amplifier; Couplings; Distributed amplifiers; Dynamic range; FETs; Feeds; Interleaved codes; Microwave amplifiers; Power amplifiers; Power transmission lines; Radiofrequency amplifiers; Doherty amplifiers; distributed amplifiers; microwave FET amplifiers; microwave power amplifiers;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384387
