P-channel, ion implanted, GaAsSb/InAlAs HIGFETs on InP for digital and microwave applications

Author

Cerny, C.L.A. ; Merkel, K.G. ; Schuermeyer, F.L. ; Bright, V.M. ; Kaspi, R.

Author_Institution

Wright Lab., Wright-Patterson AFB, OH, USA

fYear

1995

fDate

7-9 Aug 1995

Firstpage

253

Lastpage

259

Abstract

We report the first device results of ion implanted, recessed gate, p-channel GaAsSb/InAlAs HIGFETs grown lattice matched to InP with tremendous potential for use in a complementary technology on III-V substrates. The InAlAs/GaAsSb heterostructure possesses excellent hole confinement, and this is coupled to a p-channel device process which employs ion implanted contacts and a recessed gate. This implies the GaAsSb/InAlAs p-channel HIGFET has advantages in both digital and microwave design. Close examination of the GaAsSb/InAlAs heterostructure material during process development, provides an important feedback loop which resulted improved p-channel device characteristics. Microstructural evaluation of the ohmic contacts and its effect on their electrical stability are presented. Direct current characteristics and unique photoelectric characterization results on the fabricated p-channel HIGFETs are provided. Comments on maturing GaAsSb/InAlAs HIGFETs into a self-aligned gate, submicron, complementary technology for integrated circuit applications are outlined

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; ion implantation; microwave field effect transistors; ohmic contacts; semiconductor quantum wells; stability; DC characteristics; GaAsSb-InAlAs; III-V substrates; InP; InP substrate; SQW device structure; complementary technology; digital applications; electrical stability; heterostructure; hole confinement; integrated circuit applications; ion implanted HIGFETs; ion implanted contacts; microstructural evaluation; microwave applications; ohmic contacts; p-channel HIGFETs; p-channel device process; photoelectric characterization; recessed gate; self-aligned gate submicron technology; Application specific integrated circuits; Circuit stability; Feedback loop; III-V semiconductor materials; Indium compounds; Indium phosphide; Integrated circuit technology; Lattices; Microwave devices; Ohmic contacts;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482442

Filename

482442