Title :
Improvement of the tolerance to total ionizing dose in SOI CMOS
Author :
Domae, Y. ; Komatsubara, H. ; Shindou, H. ; Makihara, A. ; Kuboyama, S. ; Ida, J.
Author_Institution :
Semicond. R&D Dept., Oki Electr. Ind. Co.Ltd., Tokyo
Abstract :
According to the CMOS device on SOI substrate (SOI CMOS device), we investigate the influence of holes accumulated in buried oxide film (BOX) under the radiation environment by monitoring leakage current with back bias. We confirmed that the leakage current has the colleration to total ionizing dose (TID). SOI CMOS assumed to be not good on TID, compared to bulk. But, we confirmed the tolerance to TID in SOI CMOS was improved from 200 to 3000 Gy(Si) with the process optimization, which is better than bulk CMOS.
Keywords :
CMOS integrated circuits; accumulation layers; buried layers; leakage currents; optimisation; radiation hardening (electronics); semiconductor device reliability; silicon-on-insulator; tolerance analysis; SOI CMOS device; SOI substrate; Si; buried oxide film; hole accumulation; ionizing dose tolerance; leakage current; optimization; radiation hardness; Aerospace industry; Boron; CMOS process; Circuits; Conference proceedings; Flip-flops; Isolation technology; Leakage current; Radiation monitoring; Substrates;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656331
