Ku-band Up-converter Multi-function MMIC using 0.25 µm SiGe BiCMOS Technology

Author

Noh, YounSub ; Uhm, Manseok ; Yom, Inbok

Author_Institution

Broadcasting & Telecommun. Convergence Res. Lab., Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1164

Lastpage

1167

Abstract

Single Ku-band multi-function transmitter (Tx) MMIC for phased -array applications is designed using 0.25 μm SiGe BiCMOS technology. The MMIC includes gain amplifiers, a power amplifier, digital phase shifters, digital attenuators, and a serial-to-parallel converter. The Tx MMIC exhibits gain of 19 dB, P1dB of 21 dBm with phase and gain control functions over the Ku-band frequency of 13.5 GHz to 15 GHz. The power amplifier in a Tx MMIC was pre-designed and measured results showed a output P1dB of 21.5 dBm, gain of 14.5 dB and peak PAE of 29.1%.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; MMIC frequency convertors; MMIC phase shifters; MMIC power amplifiers; amplification; attenuators; BiCMOS technology; Ku-band up-converter multifunction MMIC; digital attenuators; digital phase shifters; frequency 13.5 GHz to 15 GHz; gain amplifiers; gain control functions; phased -array applications; power amplifier; serial-to-parallel converter; size 0.25 μm; Attenuator; Ku-band; SiGe BiCMOS; phase shifter; phased-array; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384409

Filename

5384409