Title :
High-frequency characterization of intrinsic FinFET channel
Author :
Sakai, H. ; O´uchi, S. ; Matsukawa, T. ; Endo, K. ; Liu, Y.X. ; Tsukada, T. ; Ishikawa, Y. ; Nakagawa, T. ; Sekigawa, T. ; Koike, H. ; Sakamoto, K. ; Masahara, M. ; Ishikuro, H.
Author_Institution :
Keio Univ., Yokohama, Japan
Abstract :
This paper reports the precise extraction method of high-frequency characteristics of an intrinsic part of the FinFETs. For the de-embedding of the device parasitics, open, short, and through patterns optimized for the FinFET process were originally designed. The measured data of the intrinsic part of the FinFETs were compared to the device model with extracted parameters from preliminary experiment.
Keywords :
MOSFET; semiconductor device models; device model; device parasitics; high-frequency characterization; intrinsic FinFET channel; Current measurement; FinFETs; Frequency measurement; Logic gates; Metals; Silicon; Wires;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641064
