DocumentCode :
3169465
Title :
Experience of developing and using CAD tools for III-V FETs effectively in a nonideal world
Author :
Webster, D.R. ; Parker, A.E. ; Hutabarat, M. ; Ataei, G.R. ; Haigh, D.G. ; Radmore, P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear :
1999
fDate :
1999
Firstpage :
42430
Lastpage :
316
Abstract :
This paper describes the experience gained in developing and using CAD tools for the design of low distortion and nonlinear FET circuits using III-V technology. It includes a description of the CAD packages used, key features required in the CAD packages for realistic simulation, techniques for small and large signal “quick look” assessment for choosing bias and load and some example circuits where the tools have been used successfully
Keywords :
circuit CAD; CAD packages; CAD tools; III-V MESFETs; MMIC; bias; circuit simulation; large signal analysis; load; low distortion circuits; nonlinear FET circuits; small signal analysis;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Effective Microwave CAD Tools (Ref. No. 1999/064), IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19990377
Filename :
793900
Link To Document :
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